BCR 148W H6327 Datasheet

BCR 148S H6327

Datasheet specifications

Datasheet's name BCR 148S H6327
File size 50.199 KB
File type pdf
Number of pages 11

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Digital Transistors
  • Datasheet: Infineon Technologies BCR 148W H6327
  • Transistor Type: 1 NPN - Pre Biased
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 250mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 70@5mA,5V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@500uA,10mA
  • Package: SOT-323-3
  • Manufacturer: Infineon Technologies

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