SISA01DN-T1-GE3 دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
SISA01DN-T1-GE3
|
|
حجم فایل
|
106.506
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
9
|
مشخصات فنی
-
RoHS:
true
-
Type:
P Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Vishay Intertech SISA01DN-T1-GE3
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
3.7W;52W
-
Total Gate Charge (Qg@Vgs):
84nC@10V
-
Drain Source Voltage (Vdss):
30V
-
Input Capacitance (Ciss@Vds):
3490pF@15V
-
Continuous Drain Current (Id):
22.4A;60A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.2V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
4.9mΩ@15A,10V
-
Package:
PowerPAK1212-8
-
Manufacturer:
Vishay Intertech
