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BFS 483 H6327 Datasheet
Datasheet specifications
| Datasheet's name | BFS 483 H6327 |
|---|---|
| File size | 46.394 KB |
| File type | |
| Number of pages | 6 |
Download Datasheet BFS 483 H6327 |
Download Datasheet |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Infineon Technologies BFS 483 H6327
- Transistor Type: 2 NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 65mA
- Power Dissipation (Pd): 450mW
- Transition Frequency (fT): 8GHz
- DC Current Gain (hFE@Ic,Vce): 100@15mA,8V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 12V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): -
- Package: SOT-363
- Manufacturer: Infineon Technologies