دیتاشیت PHD45N03LTA-VB
مشخصات دیتاشیت
| نام دیتاشیت |
PHD45N03LTA-VB
|
| حجم فایل |
74.555
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
VBsemi Elec PHD45N03LTA-VB
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
100W
-
Total Gate Charge (Qg@Vgs):
25nC@4.5V
-
Drain Source Voltage (Vdss):
30V
-
Input Capacitance (Ciss@Vds):
2.201nF@15V
-
Continuous Drain Current (Id):
50A
-
Gate Threshold Voltage (Vgs(th)@Id):
2V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
370pF@15V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
7mΩ@10V,21.8A
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Package:
TO-252
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Manufacturer:
VBsemi Elec
