SPP07N60C3 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies SPP07N60C3
- Power Dissipation (Pd): 83W
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 7.3A
- Gate Threshold Voltage (Vgs(th)@Id): 3.9V@350uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 600mΩ@10V,4.6A
- Package: TO-220
- Manufacturer: Infineon Technologies
