LP4101LT1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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LP4101LT1G
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حجم فایل
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75.628
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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5
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مشخصات فنی
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
LRC LP4101LT1G
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
900mW
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Total Gate Charge (Qg@Vgs):
15.23nC@4.5V
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Drain Source Voltage (Vdss):
20V
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Input Capacitance (Ciss@Vds):
882.51pF@6V
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Continuous Drain Current (Id):
2.3A
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Gate Threshold Voltage (Vgs(th)@Id):
0.95V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
97.26pF@6V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
69mΩ@4.5V,2.8A
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Package:
SOT-23(TO-236)
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Manufacturer:
LRC
