PMBTA42DS,125 دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
PMBTA42DS,125
|
|
حجم فایل
|
51.873
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
11
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Nexperia PMBTA42DS,125
-
Transistor Type:
2 NPN
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
100mA
-
Power Dissipation (Pd):
420mW
-
Transition Frequency (fT):
50MHz
-
DC Current Gain (hFE@Ic,Vce):
40@30mA,10V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
300V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@20mA,2mA
-
Package:
SOT-23-6
-
Manufacturer:
Nexperia
