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BC858C-7-F Datasheet
Datasheet specifications
| Datasheet's name | BC857C-7-F |
|---|---|
| File size | 96.371 KB |
| File type | |
| Number of pages | 7 |
Download Datasheet BC857C-7-F |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Diodes Incorporated BC858C-7-F
- Transistor Type: PNP
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 310mW
- Transition Frequency (fT): 200MHz
- DC Current Gain (hFE@Ic,Vce): 420@2mA,5V
- Collector Cut-Off Current (Icbo): 15nA
- Collector-Emitter Breakdown Voltage (Vceo): 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@100mA,5mA
- Package: SOT-23
- Manufacturer: Diodes Incorporated
