BC 849CW H6327 Datasheet

BC 850BW H6327

Datasheet specifications

Datasheet's name BC 850BW H6327
File size 75.285 KB
File type pdf
Number of pages 13

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Infineon Technologies BC 849CW H6327
  • Transistor Type: PNP
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 250mW
  • Transition Frequency (fT): 250MHz
  • DC Current Gain (hFE@Ic,Vce): 520@2mA,5V
  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@100mA,5mA
  • Package: SOT-323-3
  • Manufacturer: Infineon Technologies

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