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3DD13007MD Datasheet
Datasheet specifications
| Datasheet's name | 3DD13007MD |
|---|---|
| File size | 95.193 KB |
| File type | |
| Number of pages | 8 |
Download Datasheet 3DD13007MD |
Download Datasheet |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Jilin Sino-Microelectronics 3DD13007MD
- Transistor Type: NPN (Triple Diffused Planar Silicon Transistor)
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 8A
- Power Dissipation (Pd): 45W
- Transition Frequency (fT): 4MHz
- DC Current Gain (hFE@Ic,Vce): 8@1A,5V
- Collector Cut-Off Current (Icbo): 100uA
- Collector-Emitter Breakdown Voltage (Vceo): 400V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 2.5V@8A,2A
- Package: TO-220
- Manufacturer: Jilin Sino-Microelectronics