BFR 182W H6327 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Infineon Technologies BFR 182W H6327
- Transistor Type: -
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 35mA
- Power Dissipation (Pd): 250mW
- Transition Frequency (fT): 8GHz
- DC Current Gain (hFE@Ic,Vce): 100@10mA,8V
- Collector Cut-Off Current (Icbo): 1nA
- Collector-Emitter Breakdown Voltage (Vceo): 12V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): -
- Package: SOT-323-3
- Manufacturer: Infineon Technologies
