BC807-25-7-F Datasheet

BC807-16-7-F

Datasheet specifications

Datasheet's name BC807-16-7-F
File size 89.753 KB
File type pdf
Number of pages 7

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Diodes Incorporated BC807-25-7-F
  • Transistor Type: PNP
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 500mA
  • Power Dissipation (Pd): 310mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 160@100mA,1V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 45V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 700mV@500mA,50mA
  • Package: SOT-23
  • Manufacturer: Diodes Incorporated

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