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SI2301-ZE Datasheet
Datasheet specifications
| Datasheet's name | SI2301-ZE |
|---|---|
| File size | 59.997 KB |
| File type | |
| Number of pages | 7 |
Download Datasheet SI2301-ZE |
Download Datasheet |
|---|
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Technical specifications
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: HXY MOSFET SI2301-ZE
- Power Dissipation (Pd): 0.7W
- Drain Source Voltage (Vdss): 20V
- Input Capacitance (Ciss@Vds): 285pF
- Continuous Drain Current (Id): 2.3A
- Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 126mΩ@4.5V
- Package: SOT-23(TO-236)
- Manufacturer: HXY MOSFET