NJVMJD148T4G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NJVMJD148T4G
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حجم فایل
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75.909
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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6
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi NJVMJD148T4G
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Transistor Type:
NPN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
4A
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Power Dissipation (Pd):
1.75W
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Transition Frequency (fT):
3MHz
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DC Current Gain (hFE@Ic,Vce):
85@500mA,1V
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Collector Cut-Off Current (Icbo):
20uA
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Collector-Emitter Breakdown Voltage (Vceo):
45V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@2A,200mA
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Package:
TO-252
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Manufacturer:
onsemi
