BC847BPDW1T2G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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SBC847BPDW1T1G
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حجم فایل
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95.23
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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19
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi BC847BPDW1T2G
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Transistor Type:
1PCSNPN&1PCSPNP
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
100mA
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Power Dissipation (Pd):
380mW
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Transition Frequency (fT):
100MHz
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DC Current Gain (hFE@Ic,Vce):
200@2mA,5V
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Collector Cut-Off Current (Icbo):
15nA
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Collector-Emitter Breakdown Voltage (Vceo):
45V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
600mV@5mA,100mA;650mV@5mA,100mA
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Package:
SC-88-6
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Manufacturer:
onsemi
