PBLS6001D,115 دیتاشیت

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RoHS: true
Category: Triode/MOS Tube/Transistor/Digital Transistors
Datasheet: Nexperia PBLS6001D,115
Transistor Type: One PNP - Pre-Biased
Collector Current (Ic): 700mA;100mA
Power Dissipation (Pd): 400mW
Transition Frequency (fT): 185MHz
DC Current Gain (hFE@Ic,Vce): 30@20mA,5V;150@500mA,5V
Collector Cut-Off Current (Icbo): 1uA;100nA
Collector-Emitter Breakdown Voltage (Vceo): 60V;50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 150mV@500uA,10mA;340mV@100mA,1A
Package: SOT-23-6
Manufacturer: Nexperia