دیتاشیت FHT9014G-ME
مشخصات دیتاشیت
| نام دیتاشیت |
FHT9014G-ME
|
| حجم فایل |
51.177
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
FH (Guangdong Fenghua Advanced Tech) FHT9014G-ME
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
100mA
-
Power Dissipation (Pd):
300mW
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Transition Frequency (fT):
180MHz
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DC Current Gain (hFE@Ic,Vce):
200@1mA,5V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
45V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
300mV@100mA,10mA
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Package:
SOT-23
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Manufacturer:
FH (Guangdong Fenghua Advanced Tech)
