IPG20N04S4-08 数据手册
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技术规格
- RoHS: true
- Type: 2 N-Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IPG20N04S4-08
- Power Dissipation (Pd): 65W
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 20A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@30uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7.6mΩ@10V,17A
- Package: TDSON-8-4
- Manufacturer: Infineon Technologies
