دیتاشیت BC856W,115
مشخصات دیتاشیت
| نام دیتاشیت |
BC856W,115
|
| حجم فایل |
39.687
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Nexperia BC856W,115
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
100mA
-
Power Dissipation (Pd):
200mW
-
Transition Frequency (fT):
100MHz
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DC Current Gain (hFE@Ic,Vce):
125@2mA,5V
-
Collector Cut-Off Current (Icbo):
15nA
-
Collector-Emitter Breakdown Voltage (Vceo):
65V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
250mV@100mA,5mA
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Package:
SOT-323(SC-70)
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Manufacturer:
Nexperia
