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TPN11003NL,LQ Datasheet
Datasheet specifications
| Datasheet's name | TPN11003NL,LQ |
|---|---|
| File size | 77.555 KB |
| File type | |
| Number of pages | 9 |
Download Datasheet TPN11003NL,LQ |
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Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: TOSHIBA TPN11003NL,LQ
- Power Dissipation (Pd): 19W
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 11A
- Gate Threshold Voltage (Vgs(th)@Id): 2.3V@100uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 11mΩ@10V,5.5A
- Package: PQFN-8(3.1x3.1)
- Manufacturer: TOSHIBA
