دیتاشیت HY5012W
مشخصات دیتاشیت
| نام دیتاشیت |
HY5012W
|
| حجم فایل |
51.392
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
11
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
HUAYI HY5012W
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
500W
-
Total Gate Charge (Qg@Vgs):
352nC@10V
-
Drain Source Voltage (Vdss):
125V
-
Input Capacitance (Ciss@Vds):
16300pF@25V
-
Continuous Drain Current (Id):
300A
-
Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
930pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
2.9mΩ@10V,150A
-
Package:
TO-247A-3L
-
Manufacturer:
HUAYI
