SIZ340DT-T1-GE3 دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
SIZ340DT-T1-GE3
|
|
حجم فایل
|
99.943
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
14
|
مشخصات فنی
-
RoHS:
true
-
Type:
2 N-Channel(Half Bridge)
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Vishay Intertech SIZ340DT-T1-GE3
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
16.7W;31W
-
Total Gate Charge (Qg@Vgs):
19nC@10V
-
Drain Source Voltage (Vdss):
30V
-
Input Capacitance (Ciss@Vds):
760pF@15V
-
Continuous Drain Current (Id):
30A;40A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.4V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
9.5mΩ@15.6A,10V
-
Package:
Power-33-8
-
Manufacturer:
Vishay Intertech
