TSM650P03CX RFG 数据手册
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技术规格
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Taiwan Semiconductor TSM650P03CX RFG
- Power Dissipation (Pd): 1.56W
- Total Gate Charge (Qg@Vgs): 6.4nC@4.5V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 810pF@15V
- Continuous Drain Current (Id): 4.1A
- Gate Threshold Voltage (Vgs(th)@Id): 900mV@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 65mΩ@10V,4A
- Package: SOT-23(TO-236)
- Manufacturer: Taiwan Semiconductor