BCX 53-16 H6327 Datasheet

BCX 53-10 H6327

Datasheet specifications

Datasheet's name BCX 53-10 H6327
File size 44.895 KB
File type pdf
Number of pages 8

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Infineon Technologies BCX 53-16 H6327
  • Transistor Type: -
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 1A
  • Power Dissipation (Pd): 2W
  • Transition Frequency (fT): 125MHz
  • DC Current Gain (hFE@Ic,Vce): 160@150mA,2V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 80V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,50mA
  • Package: SOT-89-4
  • Manufacturer: Infineon Technologies

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