PSMN3R0-30YLDX Datasheet

PSMN3R0-30YLDX

Datasheet specifications

Datasheet's name PSMN3R0-30YLDX
File size 77.928 KB
File type pdf
Number of pages 13

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Technical specifications

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Nexperia PSMN3R0-30YLDX
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 91W
  • Total Gate Charge (Qg@Vgs): 46.4nC@10V
  • Drain Source Voltage (Vdss): 30V
  • Input Capacitance (Ciss@Vds): 2939pF@15V
  • Continuous Drain Current (Id): 100A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@1mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.1mΩ@10V,25A
  • Package: LFPAK-56
  • Manufacturer: Nexperia

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