PMDT290UCE,115 دیتاشیت

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مشاهده دیتاشیت PMDT290UCE,115-Isee	دانلود دیتاشیت

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RoHS: true
Type: 1PCSN-Channel&1PCSP-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Nexperia PMDT290UCE,115
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 330mW
Total Gate Charge (Qg@Vgs): 0.45nC@4.5V;0.76nC@4.5V
Drain Source Voltage (Vdss): 20V
Input Capacitance (Ciss@Vds): 55pF@10V;58pF@10V
Continuous Drain Current (Id): 800mA;550mA
Gate Threshold Voltage (Vgs(th)@Id): 750mV@250uA;800mV@250uA
Reverse Transfer Capacitance (Crss@Vds): 7pF@10V;12pF@10V
Drain Source On Resistance (RDS(on)@Vgs,Id): 290mΩ@4.5V,500mA;670mΩ@4.5V,400mA
Package: SOT-666-6
Manufacturer: Nexperia