IKB15N65EH5 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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IKB15N65EH5
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حجم فایل
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63.266
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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16
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مشخصات فنی
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RoHS:
true
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Type:
-
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
Infineon Technologies IKB15N65EH5
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Operating Temperature:
-40°C~+175°C@(Tj)
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Collector Current (Ic):
30A
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Power Dissipation (Pd):
105W
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Turn?on Delay Time (Td(on)):
16ns
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Input Capacitance (Cies@Vce):
930pF@25V
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Turn?on Switching Loss (Eon):
0.4mJ
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Diode Forward Voltage (Vf@If):
1.45V@15A
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Total Gate Charge (Qg@Ic,Vge):
38nC@15A,15V
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Turn?off Delay Time (Td(off)):
145ns
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Pulsed Collector Current (Icm):
45A
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Turn?off Switching Loss (Eoff):
0.08mJ
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Diode Reverse Recovery Time (Trr):
70ns
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Collector Cut-Off Current (Ices@Vce):
50uA@650V
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Collector-Emitter Breakdown Voltage (Vces):
650V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@150uA
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge):
1.65V@15A,15V
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Package:
TO-263-3
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Manufacturer:
Infineon Technologies
