2N7002P,215 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia 2N7002P,215
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 350mW
- Total Gate Charge (Qg@Vgs): 0.8nC@5V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 50pF@10V
- Continuous Drain Current (Id): 360mA
- Gate Threshold Voltage (Vgs(th)@Id): 2.4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.6Ω@10V,500mA
- Package: SOT-23(TO-236)
- Manufacturer: Nexperia