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13N10-VB Datasheet
Datasheet specifications
| Datasheet's name | 13N10-VB |
|---|---|
| File size | 64.238 KB |
| File type | |
| Number of pages | 7 |
Download Datasheet 13N10-VB |
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec 13N10-VB
- Power Dissipation (Pd): 3.75W
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 18A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 127mΩ@10V,20A
- Package: TO-220F
- Manufacturer: VBsemi Elec