PMN50XP-VB 数据手册
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技术规格
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec PMN50XP-VB
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 3W
- Total Gate Charge (Qg@Vgs): 5.1nC@4.5V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 450pF@15V
- Continuous Drain Current (Id): 4.8A
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 63pF@15V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 49mΩ@10V,4.1A
- Package: TSOP-6
- Manufacturer: VBsemi Elec