STP11NK50Z دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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ST STB11NK50ZT4
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حجم فایل
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65.54
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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16
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STP11NK50Z
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
125W
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Total Gate Charge (Qg@Vgs):
49nC@10V
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Drain Source Voltage (Vdss):
500V
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Input Capacitance (Ciss@Vds):
1.39nF@25V
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Continuous Drain Current (Id):
10A
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Gate Threshold Voltage (Vgs(th)@Id):
3.75V@100uA
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Reverse Transfer Capacitance (Crss@Vds):
42pF@25V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
480mΩ@10V,4.5A
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Package:
TO-220
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Manufacturer:
STMicroelectronics
