PMDPB58UPE,115 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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PMDPB58UPE,115
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حجم فایل
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59.404
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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14
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مشخصات فنی
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RoHS:
true
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Type:
2 P-Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Nexperia PMDPB58UPE,115
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
515mW
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Total Gate Charge (Qg@Vgs):
9.5nC@4.5V
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Drain Source Voltage (Vdss):
20V
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Input Capacitance (Ciss@Vds):
804pF@10V
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Continuous Drain Current (Id):
4.5A
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Gate Threshold Voltage (Vgs(th)@Id):
950mV@250uA
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Reverse Transfer Capacitance (Crss@Vds):
66pF@10V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
58mΩ@4.5V,2A
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Package:
DFN-6(2x2)
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Manufacturer:
Nexperia
