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2SB772T-P Datasheet
Datasheet specifications
| Datasheet's name | 2SB772T-P |
|---|---|
| File size | 47.618 KB |
| File type | |
| Number of pages | 6 |
Download Datasheet 2SB772T-P |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Foshan Blue Rocket Elec 2SB772T-P
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 3A
- Power Dissipation (Pd): 500mW
- Transition Frequency (fT): 80MHz
- DC Current Gain (hFE@Ic,Vce): 160@1A,2V
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@2A,200mA
- Package: SOT-89
- Manufacturer: Foshan Blue Rocket Elec