FDMS015N04B 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDMS015N04B
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 2.5W;104W
- Total Gate Charge (Qg@Vgs): 118nC@10V
- Drain Source Voltage (Vdss): 40V
- Input Capacitance (Ciss@Vds): 8725pF@20V
- Continuous Drain Current (Id): 31.3A;100A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.5mΩ@10V,50A
- Package: PQFN-8
- Manufacturer: onsemi