MJE13003L-D-TN3-R Datasheet

MJE13003L-D-TN3-R

Datasheet specifications

Datasheet's name MJE13003L-D-TN3-R
File size 43.098 KB
File type pdf
Number of pages 9

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: UTC(Unisonic Tech) MJE13003L-D-TN3-R
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 1.5A
  • Power Dissipation (Pd): 25W
  • Transition Frequency (fT): 10MHz
  • DC Current Gain (hFE@Ic,Vce): 31@1A,5V
  • Collector Cut-Off Current (Icbo): -
  • Collector-Emitter Breakdown Voltage (Vceo): 400V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 3V@1.5A,500mA
  • Package: TO-252
  • Manufacturer: UTC(Unisonic Tech)

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