PDTC114EM,315 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Digital Transistors
- Datasheet: Nexperia PDTC114EM,315
- Transistor Type: 1 NPN - Pre Biased
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 250mW
- DC Current Gain (hFE@Ic,Vce): 30@5mA,5V
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 150mV@10mA,500uA
- Package: SOT-883-3
- Manufacturer: Nexperia
