18N20 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: GOFORD 18N20
- Power Dissipation (Pd): 65.8W
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 18A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 160mΩ@10V,9A
- Package: TO-251(IPAK)
- Manufacturer: GOFORD
