دیتاشیت DMN1019USN-7
مشخصات دیتاشیت
| نام دیتاشیت |
DMN1019USN-7
|
| حجم فایل |
93.347
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Diodes Incorporated DMN1019USN-7
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
680mW
-
Total Gate Charge (Qg@Vgs):
50.6nC@8V
-
Drain Source Voltage (Vdss):
12V
-
Input Capacitance (Ciss@Vds):
2426pF@10V
-
Continuous Drain Current (Id):
9.3A
-
Gate Threshold Voltage (Vgs(th)@Id):
800mV@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
10mΩ@4V,9.7A
-
Package:
SOT-23
-
Manufacturer:
Diodes Incorporated
