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MMBT3904 RFG Datasheet
Datasheet specifications
| Datasheet's name | MMBT3904 RFG |
|---|---|
| File size | 76.626 KB |
| File type | |
| Number of pages | 4 |
Download Datasheet MMBT3904 RFG |
Download Datasheet |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Taiwan Semiconductor MMBT3904 RFG
- Transistor Type: NPN
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 200mA
- Power Dissipation (Pd): 300mW
- Transition Frequency (fT): 250MHz
- DC Current Gain (hFE@Ic,Vce): 100@10mA,1V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 40V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@50mA,5mA
- Package: SOT-23(TO-236)
- Manufacturer: Taiwan Semiconductor