RTE002P02TL دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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RTE002P02TL
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حجم فایل
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45.627
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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3
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مشخصات فنی
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
ROHM Semicon RTE002P02TL
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Operating Temperature:
+150°C@(Tch)
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Power Dissipation (Pd):
150mW
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Total Gate Charge (Qg@Vgs):
-
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Drain Source Voltage (Vdss):
20V
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Input Capacitance (Ciss@Vds):
50pF@10V
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Continuous Drain Current (Id):
200mA
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Gate Threshold Voltage (Vgs(th)@Id):
2V@1mA
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Reverse Transfer Capacitance (Crss@Vds):
5pF@10V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
1Ω@4.5V,200mA
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Package:
EMT-3
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Manufacturer:
ROHM Semicon
