دیتاشیت 2SA812 M7
مشخصات دیتاشیت
| نام دیتاشیت |
2SA812 M7
|
| حجم فایل |
84.2
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. 2SA812 M7
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
100mA
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Power Dissipation (Pd):
200mW
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Transition Frequency (fT):
180MHz
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DC Current Gain (hFE@Ic,Vce):
300@1mA,6V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
50V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
300mV@100mA,10mA
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Package:
SOT-23
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Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.
