دیتاشیت IRF7769L1TRPBF
مشخصات دیتاشیت
| نام دیتاشیت |
IRF7769L1TRPBF
|
| حجم فایل |
122.827
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
11
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Infineon Technologies IRF7769L1TRPBF
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
3.3W;125W
-
Total Gate Charge (Qg@Vgs):
300nC@10V
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
11560pF@25V
-
Continuous Drain Current (Id):
20A;124A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
3.5mΩ@74A,10V
-
Package:
MG-WDSON-11
-
Manufacturer:
Infineon Technologies
