IPD50N06S2-14 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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IPD50N06S2-14
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حجم فایل
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57.47
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Infineon Technologies IPD50N06S2-14
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
136W
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Total Gate Charge (Qg@Vgs):
52nC@10V
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Drain Source Voltage (Vdss):
55V
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Input Capacitance (Ciss@Vds):
1485pF@25V
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Continuous Drain Current (Id):
50A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@80uA
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
14.4mΩ@32A,10V
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Package:
TO-252
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Manufacturer:
Infineon Technologies
