3DD13005GRD دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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3DD13005GRD
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حجم فایل
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66.954
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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4
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Wuxi China Resources Huajing Microelectronics 3DD13005GRD
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Transistor Type:
NPN (Triple Diffused Planar Silicon Transistor)
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
4A
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Power Dissipation (Pd):
50W
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Transition Frequency (fT):
5MHz
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DC Current Gain (hFE@Ic,Vce):
15@1A,5V
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Collector Cut-Off Current (Icbo):
100uA
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
250mV@2A,500mA
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Package:
TO-262-3
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Manufacturer:
Wuxi China Resources Huajing Microelectronics
