دیتاشیت IRF40DM229
مشخصات دیتاشیت
| نام دیتاشیت |
IRF40DM229
|
| حجم فایل |
76.681
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
12
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Infineon Technologies IRF40DM229
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
83W
-
Total Gate Charge (Qg@Vgs):
161nC@10V
-
Drain Source Voltage (Vdss):
40V
-
Input Capacitance (Ciss@Vds):
5317pF@25V
-
Continuous Drain Current (Id):
159A
-
Gate Threshold Voltage (Vgs(th)@Id):
3.9V@100uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
1.85mΩ@97A,10V
-
Package:
DirectFET
-
Manufacturer:
Infineon Technologies
