دیتاشیت FDB3632
مشخصات دیتاشیت
| نام دیتاشیت |
FDB3632
|
| حجم فایل |
56.933
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
17
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi FDB3632
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
310W
-
Total Gate Charge (Qg@Vgs):
110nC@10V
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
6000pF@25V
-
Continuous Drain Current (Id):
null;80A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
9mΩ@80A,10V
-
Package:
D2PAK-3
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Manufacturer:
onsemi
