دیتاشیت FDB3632
مشخصات دیتاشیت
نام دیتاشیت |
FDB3632
|
حجم فایل |
56.933
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
17
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDB3632
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
310W
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Total Gate Charge (Qg@Vgs):
110nC@10V
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Drain Source Voltage (Vdss):
100V
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Input Capacitance (Ciss@Vds):
6000pF@25V
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Continuous Drain Current (Id):
null;80A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
9mΩ@80A,10V
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Package:
D2PAK-3
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Manufacturer:
onsemi