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PSMN015-100YLX Datasheet
Datasheet specifications
| Datasheet's name | PSMN015-100YLX |
|---|---|
| File size | 67.11 KB |
| File type | |
| Number of pages | 13 |
Download Datasheet PSMN015-100YLX |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PSMN015-100YLX
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 195W
- Total Gate Charge (Qg@Vgs): 86.3nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 6139pF@25V
- Continuous Drain Current (Id): 69A
- Gate Threshold Voltage (Vgs(th)@Id): 2.1V@1mA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 14.7mΩ@20A,10V
- Package: SOT-669
- Manufacturer: Nexperia