دیتاشیت IPW60R190E6
مشخصات دیتاشیت
| نام دیتاشیت |
IPW60R190E6
|
| حجم فایل |
70.884
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
17
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Infineon Technologies IPW60R190E6
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
151W
-
Total Gate Charge (Qg@Vgs):
63nC@10V
-
Input Capacitance (Ciss@Vds):
1400pF@100V
-
Continuous Drain Current (Id):
20.2A
-
Gate Threshold Voltage (Vgs(th)@Id):
3.5V@630uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
190mΩ@9.5A,10V
-
Package:
TO-247-3
-
Manufacturer:
Infineon Technologies
