PSMN1R0-40SSHJ Datasheet

PSMN1R0-40SSHJ

Datasheet specifications

Datasheet's name PSMN1R0-40SSHJ
File size 78.319 KB
File type pdf
Number of pages 13

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Nexperia PSMN1R0-40SSHJ
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 375W
  • Total Gate Charge (Qg@Vgs): 137nC@10V
  • Drain Source Voltage (Vdss): 40V
  • Input Capacitance (Ciss@Vds): 10322pF@25V
  • Continuous Drain Current (Id): 325A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.6V@1mA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1mΩ@25A,10V
  • Package: SOT-1235
  • Manufacturer: Nexperia

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