دیتاشیت SUD50N04-8M8P-4GE3
مشخصات دیتاشیت
| نام دیتاشیت | SUD50N04-8M8P-4GE3 |
|---|---|
| حجم فایل | 77.396 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 10 |
دانلود دیتاشیت SUD50N04-8M8P-4GE3 |
SUD50N04-8M8P-4GE3 Datasheet |
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مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SUD50N04-8M8P-4GE3
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 3.1W;48.1W
- Total Gate Charge (Qg@Vgs): 56nC@10V
- Drain Source Voltage (Vdss): 40V
- Input Capacitance (Ciss@Vds): 2400pF@20V
- Continuous Drain Current (Id): 14A;50A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8.8mΩ@20A,10V
- Package: TO-252
- Manufacturer: Vishay Intertech
